page 1 NPTB00004A nds - 036 rev. 2, 011414 g a ll i u m n i tr i d e 2 8 v , 5 w , dc - 6 ghz hemt built using the sigantic ? process - a proprietary gan - on - silicon technology dc - 6 ghz 5w gan hemt s ym b ol p a r am e t e r min t y p m a x u n i t s g ss sm al l - sig nal g ain - 16 - db p sat s a t u r a t e d o u tp ut p o w e r - 37.1 - d bm ? sat efficiency at s a t u r a t e d o u tp ut p o w e r - 63.7 - % g p g ain at p out = 4w 12.8 14.8 - db ? drain e f f i c ie n c y at p out = 4w 45 57 - % v ds drain voltage - 28 - v ? ruggedness: output mismatch, all phase angles vswr = 15:1, no device damage rf s p ec i fi c a t ion s ( c w , 2.5 gh z ) : v ds = 2 8 v , i d q = 50 m a , t c = 2 5 c product description the NPTB00004A gan hemt is a wideband transistor optimized for dc - 6 ghz operation. this device has been designed for cw, pulsed, and linear operation with output power levels to 5w (37 dbm) in an industry standard surface mount soic plastic package. at frequencies below 3ghz, the NPTB00004A is a drop in replacement for the nptb00004. f eatures ? broa d band op e r a tio n f r o m dc - 6 ghz ? 28v operation ? industry standard plastic package ? high drain efficiency (>55%) ? drop in replacement for nptb00004 applications ? broadband general purpose ? defense communications ? land mobile radio ? wireless infrastructure ? ism applications ? vhf/uhf/l - band radar
page 2 NPTB00004A nds - 036 rev. 2, 011414 s ym b ol p a r am e t e r min t y p m a x u n i t s off characteristics i dlk drain - source leakage current (v gs = - 8v, v ds =100v) - - 2 ma i glk gate - source leakage current (v gs = - 8v, v ds =0v) - - 1 ma on characteristics v t gate threshold voltage (v ds =28v, i d =2ma) - 2.5 - 1.6 - 0.5 v v gsq gate quiescent voltage (v ds =28v, i d =50ma) - 2.1 - 1.3 - 0.3 v r on on resistance (v ds =2v, i d =15ma) - 1.6 - ? i d, max maximum drain current (v ds =7v pulsed, 300s pulse width, 0.2% duty cycle) - 1.4 - a dc s p ec i fi c a t ion s : t c = 2 5 c thermal resistance specification: symbol parameter t yp units r ? jc the r m al r esi s t an c e ( j un c tio n - t o - case ) , t j = 1 8 0 c 15 c / w ab s ol ut e m a xi m u m r a t in g s : n ot s imul t a neo us, t c = 2 5 c un le s s o the r wis e n o t e d symbol parameter max units v ds d r ai n - so u r c e v o l t a g e 1 0 0 v v g s g a t e - so u r c e v o l t ag e - 1 0 to 3 v i g g a t e cu r re n t 4 ma p t t o t a l d e vi c e p o w e r d i s s ipa tio n ( d er a t e d a b ov e 2 5 c ) 11.6 w t s tg s t or a g e t emper a t u r e r a ng e - 6 5 to 1 5 0 c t j o per a t i n g j un c tio n t emper a t u r e 2 00 c hbm human body model esd rating (per jesd22 - a114) class 1a msl moisture sensitivity level (per ipc/jedec j - std - 020) msl - 3 junction temperature (t j ) measured using ir microscopy, case temperature (t c ) measured using a thermocouple embedded in heatsink.
page 3 NPTB00004A nds - 036 rev. 2, 011414 frequency (mhz) z s ( ? z l ( ? p sat (w) g ss (db) drain efficiency @ p sat (%) 900 6.1 + j15 72 + j36 7.0 23 68 2200 5.0 - j5.0 14 + j17 6.7 19 66 2700 5.0 - j10 13 - j12 6.7 17 62 5800 10 - j60 14 - j34 6.5 11 52 optimum source and load impedances: (cw drain efficiency and output power tradeoff impedance) figure 1: cw power/drain efficiency tradeoff impedances, z o =50 ? load - pull data, reference plane at device leads v ds =28v, i dq =50ma, t c =25 ? c unless otherwise noted figure 2: gain vs. p out figure 3: efficiency vs. p out 0 10 20 30 40 50 60 70 15 20 25 30 35 40 900mhz 2200mhz 2700mhz 5800mhz gain (db) p out (dbm) 5 10 15 20 25 15 20 25 30 35 40 900mhz 2200mhz 2700mhz 5800mhz gain (db) p out (dbm)
page 4 NPTB00004A nds - 036 rev. 2, 011414 2.5 ghz narrowband circuit (cw, v ds =28v, i dq =50ma, t c =25 ? c, unless otherwise noted) figure 4: component placement of 2.5 ghz narrowband circuit for NPTB00004A reference value manufacturer part number c1, c6 1f avx 12101c105kat2a c2, c7 0.1f murata grm188r72a104ka35d c3, c8 0.01f avx 06031c103kat2a c4, c9 1000pf avx 06031c102kat2a c5 100f panasonic ece - v1ja101p c10, c11 33pf atc 600f330jt c12 2.4pf atc 600f2r4jt c13 2.7pf atc 600f2r7jt c14 3.3pf atc 600f3r3jt c15 1.5pf atc 600f1r5jt r1 200? panasonic erj - 2gej201x r2 0.033? panasonic erj - 6bwjr033w pcb ro4350, ? r =3.5, 0.020 rogers nitronex nbd - 068r2
page 5 NPTB00004A nds - 036 rev. 2, 011414 typical performance in 2.5 ghz narrowband circuit (cw, v ds =28v, i dq =50ma, f=2.5ghz, t c =25 ? c, unless otherwise noted) figure 6: gain vs. p out figure 8: quiescent v gs vs. temperature figure 9: power de - rating curve (t j = 200c, t c > 25c) figure 5. electrical schematic of 2.5 ghz narrowband circuit for NPTB00004A (for rf tuning details see component placement diagram figure 4) figure 7: drain efficiency vs. p out 11 12 13 14 15 16 17 18 15 20 25 30 35 40 -40 o c 25 o c 85 o c gain (db) p out (dbm) 0 10 20 30 40 50 60 15 20 25 30 35 40 -40 o c 25 o c 85 o c drain efficiency (%) p out (dbm) -1.5 -1.4 -1.3 -1.2 -1.1 -50 -25 0 25 50 75 100 25ma 50ma 75ma v gsq (v) temperature ( o c) 0 5 10 15 25 50 75 100 125 150 175 total power dissipation (w) case temperature ( o c)
page 6 NPTB00004A nds - 036 rev. 2, 011414 typical performance in 2.5 ghz narrowband circuit (cw, v ds =28v, i dq =50ma, f=2.5ghz, t c =25 ? c, unless otherwise noted) figure 10: 2 - tone imd3 vs. p out vs. i dq (1mhz tone spacing) figure 12: 2 - tone imd vs. p out (1mhz tone spacing) figure 11: 2 - tone gain vs. p out vs. i dq (1mhz tone spacing) -60 -50 -40 -30 -20 -10 0.1 1 10 -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 imd (dbc) p out (w-pep) 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.1 1 10 17ma 25ma 50ma 75ma 100ma gain (db) p out (w-pep) -45 -40 -35 -30 -25 -20 -15 0.1 1 10 17ma 25ma 50ma 75ma 100ma imd (dbc) p out (w-pep)
page 7 NPTB00004A nds - 036 rev. 2, 011414 100 - 800 mhz broadband circuit (cw, v ds =28v, i dq =50ma, t c =25 ? c, unless otherwise noted) figure 13: component placement of 100 - 800 mhz broadband circuit for NPTB00004A reference value manufacturer part number c1, c8 1f avx 12101c105kat2a c2, c7 0.1f murata grm188r72a104ka35d c3, c6, c10 0.01f avx 06031c103kat2a c4, c5, 1000pf avx 06031c102kat2a c9 100f panasonic ece - v1ja101p c11, c14 240pf atc 600f241f c12 10pf atc 600f100b c13, c15 1.5pf atc 600f1r5jt f1 material 73 fair - rite 2673000801 l1 100nh coilcraft 0805cs101x l2 100nh coilcraft 1812sms - r10 l3, l5 5nh coilcraft a02tklj l4 2.5nh coilcraft a01tklj r1 300? panasonic erj - 14yj301u r2 0.33? susumu rl1220s - r33 - f r3 470? stackpole rhc2512ft470r r4 10? panasonic erj - 14yj100u pcb ro4350, ? r =3.5, 0.020 rogers nitronex nbd - 113r1
page 8 NPTB00004A nds - 036 rev. 2, 011414 typical performance in 100 - 800 mhz broadband circuit (cw, v ds =28v, i dq =50ma, t c =25 ? c, unless otherwise noted) figure 14. electrical schematic of 100 - 800 mhz broadband circuit for nptb0004a (for rf tuning details see component placement diagram figure 13) figure 15: performance vs. frequency (p out = p sat ) figure 16: performance vs. frequency (p out = 36dbm) figure 17: performance vs. p out (f = 600mhz) figure 18: small signal s - parameters vs. frequency 0 5 10 15 20 25 30 35 40 45 50 55 100 200 300 400 500 600 700 800 gain drain eff p sat gain (db) p sat (dbm), drain efficiency (%) frequency (mhz) 5 10 15 20 25 30 20 25 30 35 40 45 100 200 300 400 500 600 700 800 gain drain eff gain (db) drain efficiency (%) frequency (mhz) 10 15 20 25 30 -40 -30 -20 -10 0 100 200 300 400 500 600 700 800 s21 s11 s22 magnitude s 21 (db) magnitude s 11 , s 22 (db) frequency (mhz) 11 12 13 14 15 16 0 10 20 30 40 50 15 20 25 30 35 40 gain drain eff gain (db) drain efficiency (%) p out (dbm)
page 9 NPTB00004A nds - 036 rev. 2, 011414 f igur e 19 - soic - 8ne plastic package dimensions (all dimensions in inches [millimeters]) function pin gate rf input 2, 3 drain rf output 6, 7 source ground exposed pad 1, 4, 5, 8 no connect* * all no connect pins may be left floating or grounded
page 10 NPTB00004A nds - 036 rev. 2, 011414 n i t r o n e x, llc 2 30 5 p reside n tia l d r i ve d u r h am, n c 2 7 7 0 3 us a + 1 . 9 1 9 . 8 0 7 . 9 1 0 0 ( t elephon e ) + 1 . 9 1 9 . 8 0 7 .92 0 0 ( f a x ) inf o @ ni t ron e x . c o m ww w .ni t ron e x . c om a d d i t iona l i n f o r ma t io n t h i s pa r t i s l ea d - f r e e an d i s c o m p l ian t wi t h th e r o h s dire ct i v e ( r e s tr i ct ion s o n th e use o f ce r t ai n h a z a r d o u s s u b s t an ce s i n e l e ctr i c a l an d e l e ct r oni c e q u i pm en t ). i m po r t an t no t i c e n i t ron e x, llc rese r v e s th e r ig h t to m a k e c o r re c tio ns, m o d i f i c a tio ns, e nhan c eme n t s, i mpr ov eme n t s a n d o the r c h a nge s to i t s pr o du ct s a n d se r vi c e s at a n y t i m e a n d to d is c o n t in u e a n y pr o du c t o r se r vi c e w i tho ut n o ti c e . cust ome r s s ho u l d o b t ain t h e la t e st rel ev a n t inf o r m a tio n b e f or e p la c i n g orde r s a n d s ho u l d v e r i f y t hat su c h inf o r m a tio n i s c u r re n t a n d c ompl et e . a ll pr o du ct s a r e sol d su bje c t to n i tron e x t e r m s a n d c on di tio ns of s a l e su pp l ie d at th e t i m e of orde r a ck n o w ledgme n t . th e la t e st inf o r m a t i o n f ro m n i tron e x c an b e f o u n d e i the r b y c a lli n g n i tron e x at 1 - 9 1 9 - 8 0 7 - 9 1 0 0 o r vis i t i n g o ur w ebs i t e at ww w .ni t ron e x . c o m. n i t ron e x w a r r a n t s pe r f o r m an c e of i t s pa c k age d semi c on du c t o r o r d i e to th e s pe c i f i c a tio ns a pp l i c a bl e at th e t i m e of sal e in a c c or dan c e w i t h n i tron e x s t a n da r d w a r r a n t y . t e s t i n g a n d o the r quali t y c o n tro l t e c hn i q ue s a r e u se d to th e e x t e n t n i t ron e x deem s ne c e s s a r y to su p- po r t th e w a r r a n t y . e x c e p t wher e m a n da t e d b y g ov e r n me n t re qu ireme n t s, t e s t i n g of all pa r a m et e r s of e a c h pr o du c t i s n ot ne c e s sa r i ly pe r f o r me d . n i t ron e x a s su me s n o l i a bi li t y f o r a pp l i c a tio ns a s si s t an c e o r c ust ome r pr o du c t desig n . cust ome r s a r e re s po n s i bl e f o r t hei r pr o du c t a n d a pp l i c a tio ns u s i n g n i tron e x semi c on du c t o r pr o du ct s o r se r vi c e s. t o m ini m i z e th e r i s k s a s so c i a t e d w i t h c ust ome r pr o du ct s a n d a pp l i c a- tio ns, c ust ome r s s ho u l d pr o vid e a de qua t e desig n a n d oper a t i n g s af eg u ar ds. n i t ron e x d o e s n ot w a r r a n t o r represe n t t hat a n y l i c e n s e , e i the r e xpre s s o r i mp l ie d , i s gr a nt e d u nde r a n y n i tron e x pa t e n t r ig h t , c o p y r ig h t , m ask w o r k r ig h t , o r o the r n i tron e x i nt e l le c tual prope r t y r ig h t re la t i n g to a n y c omb ina tio n , m a c hi n e o r pr o c e s s in w h i c h n i t ron e x pr o du ct s o r se r vi c e s a r e u se d . r epr o du c t i o n of inf o r m a tio n in n i tron e x da t a s he e t s i s pe r m i t t e d i f a n d o nly i f s a i d repr o du c tio n doe s n ot al t e r a n y of th e inf o r m a t i o n a n d i s a c c om pan ie d b y all a s s o c i a t e d w a r r a n tie s, c on di tio ns, li m i t a tio ns a n d n o ti c e s. a n y al t er a tio n of th e c o n t ai ne d inf o r m a tio n i nv al i da t e s all w a r r a n tie s a n d n i tron e x i s n ot re s po n s i bl e o r l i a bl e f o r a n y su c h s t a t eme n t s. n i t ron e x pr o du ct s a r e n ot i nt ende d o r au tho r i z e d f o r u s e in l i fe su ppo r t s ys t em s, in c l u di n g but n ot li m i t e d to su r g i c al i mp la n t s i n to t h e b o dy o r a n y o the r a pp l i c a tio n i nt ende d to su ppo r t o r sus t ain l i f e . sho u l d b u y e r p u r c ha s e o r u s e n i t ron e x, llc pr o du ct s f o r a n y su c h uni nt ende d o r unau tho r i z e d a pp l i c a tio n , b u y e r sh a ll i ndem n i f y a n d hol d n i tron e x, llc, i t s o f f i c e r s, empl oy ee s, su bsi d i a r ie s, a f f i l i a t e s, d i s t r ibut o r s, a n d i t s su cc e s so r s h a r mle s s a g ainst all c lai m s, c o s t s, da m a ge s, a n d e xpe n se s, a n d re a so na bl e a t t o r n e y f ee s a r is i n g o ut o f , d ire ct ly o r i n d ire ct l y , a n y c laim of pe r so nal inju r y o r de a t h a s so c i a t e d w i t h su c h uni nt ende d o r unau tho r i z e d u s e , n o t w i t hs t a n di n g i f su c h c laim al lege s t hat n i t ron e x w as neg l ige n t reg a r di n g th e desig n o r m an uf a c tu r e of s a i d pr o du ct s. n i t ron e x a n d t h e n i tron e x l o g o a r e re g i s t ere d tr a dema r k s of n i tron e x, llc . a ll o t he r pr o du c t o r se r vi c e na me s a r e th e prope r t y of thei r re s pe c ti v e o wne r s. ? n i t ron e x, llc 2 0 13 a ll r ig h t s rese r v e d .
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